e Its width depends upon the doping level.. thin depletion layer e Heavy doped o lightly doped thick depletion layer, POTENTIAL BARRIER The electrons in the N region have to climb the potential hill in order to reach the P region Electrons trying to cross from the N region to P region experience a retarding field of the battery and therefore repelled. Now, in this junction, there exist… An attractive animation is presented in this video with complete voice description. Doping with acceptor creates p type semiconductor while doping with donors produces n type. In LED, the p and n regions are forward biased. When the voltage is applied, due to the forward biased condition, the majority carriers of one side move towards the other. RESISTORS With proper biasing, PN diode allows current to flow in SINGLE DIRECTION. Hence it is an unidirectional device. As the newly formed component can have two terminals or electrodes (one connected to P-type and the other to the N-type) it is called as diode or P-N junction diode or semi-conductor diode. o For each hole in the P section that combines with an electron from the N section, a covalent bond breaks and an electron is liberatyed which enters the positive terminal Thus creating an electron hole pair. Light Emitting Diode (LED) works only in forward bias condition. ... PN JUNCTION DIODES AND. PN.ppt - Free download as Powerpoint Presentation (.ppt), PDF File (.pdf), Text File (.txt) or view presentation slides online. pn-junction-fabrication In practice, the P-N junction is formed from a single mono crystalline structure by adding carefully controlled amounts of donor and acceptor impurities. PN junction can basically work in two modes, (A battery is connected to the diode ) Oforward bias mode ( positive terminal connected to p-region and negative terminal connected to n region) areverse bias mode ( negative terminal connected to p-region and positive terminal connected to n region) . The P … The circuit connection for determining the V-I characteristics of a pn junction is shown in the figure below. Such junctions show a pronounced rectifying behavior. See our User Agreement and Privacy Policy. It forces the majority charge carriers to move across the junction ... .decreasing the width of the depletion layer. When Light Emitting Diode (LED) is forward biased, the free electrons from n-side and the holes from p-side are pushed towards the junction. N region loses its electrons ......becomes + VIY charged P region accepts the electrons ......becomes -vly charged At one point , the migratory action is stopped. PN junction diodes can be obtained in a number of semiconductor materials - the earliest diodes tended to be made from germanium, but most of them today are silicon diodes. o As an switch in computer circuits. Forward biasing a pn junction diode is very simple. Once the junction is crossed, a number of electrons and the holes will recombine . You just need to take a battery whose values can be varied from (o to V volts), connect its positive terminal to the p-side of pn junction diode and then connect the negative terminal of battery to the n-side of the pn junction diode. They become minority carriers of the other side. PN Junction Diode ENGI 242 ELEC 222 PN Junction Diode Diode Model Analysis Ideal Approximation Exact Diode Specification Sheets Diode Resistance Static Resistance RD ... – A free PowerPoint PPT presentation (displayed as a Flash slide show) on PowerShow.com - id: 6e985b-NzNlY Joining p-and n-doped semiconductors. Reverse biased junction If the + of the battery is connected to the n-type and the - terminal to the p-type, the free electrons and free holes are attracted back towards the battery, hence back from the depletion layer, hence the depletion layer grows. 1. Here discussion is limited only to acquaintation with the basic techniques and terminology (not expertise in fabrication). An additional electrons from the N region are repelled by the net negative charge of the p region. A P-type material has holes as the majority carriers and an N-type material has electrons as the majority carriers. The horizontal line in the below figure represents the amount of voltage applied across the p-n junction diode whereas the vertical line represents the amount of current flows in the p-n junction diode. P-N Junction Diode: A P-N Junction Diode is one of the simplest semiconductor devices around, and which has the characteristic of passing current in only one direction only. interface or a boundary between two semiconductor material types This concentration will be more at the junction. As the name stands PN junction Diode is made up of P type and N Type semiconductor material. Please enter the OTP sent to your mobile number: Post an enquiry and get instant responses from qualified and experienced tutors. This may be achieved by diffusing acceptor impurities in to an n type silicon crystal or by the opposite sequence. The p-n junction is a versatile element, which can be used as a In 1962, Nick Holonyak has come up with an idea of light emitting diode, and he was working for the general electric company. See our Privacy Policy and User Agreement for details. Normally the voltage is taken along the x-axis and current along y-axis. For example, if N-type is considered, the excess of holes that enter into N-type after applying forward bias, adds to the already present minority carriers of N-type material. P-n junctions consist of two semiconductor regions of opposite type. When free electrons reach the junction or depletion region, some of the free electrons recombine with the holes in the positive ions. Depletion and built-in voltage. If you continue browsing the site, you agree to the use of cookies on this website. PN Junction diode. 40 30 20 10 40 Forward Bias Region 140 V (volts) 120 80 0.4 2 6 0.8 12 V (volts) Reverse Bias Region Figure 5.1: Diode Characteristics. For each approved PPT you will get 25 Credit Points and 25 Activity Score which will increase your profile visibility. However, unlike a resistor, a diode does not behave linearly with respect to the applied voltage as the diode has an exponential current-voltage ( I-V ) relationship. ADVANTAGES: o No filament is necessary Occupies lesser space o Long life. 4 Basic Semiconductor. This is done to order to allow the light energy to pass through it. Working of PN Junction Diode If an external potential is applied to the terminals of PN junction, it will alter the potential between the P and N-regions. The terminal connected to P-type material is called Anode and … PN junction diode – Study Material. If one side of a single crystal of pure semiconductor (Ge or Si) is doped with acceptor impurity atoms and the other side is doped with donor impurity atoms, a PN junction is formed as shown in Fig P region has a high concentration of holes and N region contains a large number of electrons. Forward biased PN junction o. If you continue browsing the site, you agree to the use of cookies on this website. As both of them travel towards the junction, holes and electrons recombine with each other to neutralize and forms ions. Minority charge carrier concentration reduces exponentially as seen away from the junction. This is known as DEPLETION LAYER ..Thickness is of the order of 10-6meter. Looks like you’ve clipped this slide to already. o Potential thus produced are called ..potential barrier Ge..O.3V Si ..o.7V. Let us consider few notations. It supplies a voltage and a current to a resistive load (light, battery, motor). Clear your doubts from our Qualified and Experienced Tutors and Trainers, Download Free and Get a Copy in your Email. o The depletion layer contains no free and mobile charge carriers but only fixed and immobile ions. In ideal conditions, this PN junction behaves as a short circuit when it is forward biased, and as an open circuit when it is in the reverse biased. Now customize the name of a clipboard to store your clips. The Light emitting diode is a two-lead semiconductor light source. Slideshare uses cookies to improve functionality and performance, and to provide you with relevant advertising. Movement of electrons and holes when forming the junction Depletion Region Approximation: Step Junction Solution Fig. PN junction can basically work in two modes, (Abattery is connected to the diode) forward bias mode (positive terminal connected to p-region and negative terminal connected to n region) reverse bias mode (negative terminal connected to p-region and positive terminal connected to n region) … A PN-junction diode is formed when a p-type semiconductor is fused to an n-type semiconductor creating a potential barrier voltage across the diode junction The effect described in the previous tutorial is achieved without any external voltage being applied to the actual PN junction resulting in the junction being in a state of equilibrium. ... PIN Diode Working Characteristics and Its Applications.pdf. Slideshare uses cookies to improve functionality and performance, and to provide you with relevant advertising. The V-I characteristics or voltage-current characteristics of the p-n junction diode is shown in the below figure. The PN junction of the device placed inside a glass material. Volt-ampere (V-I) characteristics of a pn junction or semiconductor diode is the curve between voltage across the junction and the current through the circuit. Similarly, o An additional holes from the P region are repelled by the net positive charge of the n region. The LED occupies the s… As opposite charges attract, few holes in P-type tend to go to n-side, whereas few electrons in N-type tend to go to P-side. Similarly for holes from P region. o As detectors in radios to detect audio signals o As LED to emit different colours. P-N JUNCTION  Also known as a diode  One of the basics of semiconductor technology -  Created by placing n-type and p-type material in close contact  Diffusion - mobile charges (holes) in p- type combine with mobile charges (electrons) in n-type 14. A pn junction diode is a two terminal single crystal semiconductor device whose one side is doped with acceptors and other side by donors. As only the junction is exposed to radiation, thus, the other portion of the glass material is painted black or is metallised. When a forward voltage is applied to the PN junction diode. This potential difference can alter the flow of majority carriers, so that the PN junction can be used as an opportunity for the diffusion of electrons and holes. Consider the nside of the junction, where the excess minority carriers are holes. P-NJUNCTION p-njunction is a boundary or interface between two types of semiconductor material/ p- type and n-type, inside a single crystal of semiconductor. If a P-type and an N-type material are brought close to each other, both of them join to form a junction, as shown in the figure below. V Definition. 3. Holes. Understanding about the P-N Junction Diode Theory and Working A P-N Junction Diode is formed by doping one side of a piece of silicon with a P-type dopant (Boran) and the other side with a N-type dopant (phosphorus).Ge can be used instead of Silicon. Forward biased diode: In a very PN junction diode once the forward voltage is applied that is, a positive terminal of a source is connected to the p aspect, and conjointly the negative terminal of the availability is connected to the n-type aspect, the diode is speculated to be in forward biased condition. A p-n junction is the metallurgical boundary between the n and p-regions of a semiconductor crystal. Formation of depletion layer the excess electrons in the N region cross the junction and combine with the excess holes in the P region. o Electronic Symbol .....the triangle shows indicated the direction of current P type N type Depletion layer forms an insulator between the 2 sides. A PN junction is the simplest form of the semiconductor diode. 1. o Thus the P N junction diode allows the electrons flow only when P is positive , o This property is used for the conversion of AC into DC , Which is called rectification. 2. Lecture 18 The P-N Junction (The Diode). V Principle of Solar Cell V Current generation V I-V characteristic of an illuminated p-n junction V Physical process of Solar cell V I-V characteristic of solar cell V Solar cell parameter V Applications V reference V Device that converts optical energy into electrical energy. A p-n junction diode is formed by placing and n type semiconductor materials in intimate p contact on an atomic scale. Thus a reverse biased pn junction does not conduct current. It is used majorly in rectifier and voltage regulator circuits. . It is created by doping. Current-voltage characteristics of the p-n junction. It operates like any other forward biased junction diode. PN Junction Diode Characteristics[ V-I Forward and Reverse] PN Junction diode is a semiconductor devices which conducts from only one side. Thus a pn junction is formed in diode. We use your LinkedIn profile and activity data to personalize ads and to show you more relevant ads. If you have your own PowerPoint Presentations which you think can benefit others, please upload on LearnPick. But the material from which it is composed differentiates it from the ordinary one. how the electrons and holes are released while applying FB and RB in PN-junctions. Today: 1. These materials are N-type, having electrons are majority carrier and P-type material, having holes are majority carrier. PN Junction diode is a device made of two semiconductor material joined together with the required amount of impurity. The name diode is derived from “di–ode” which means a device that has two electrodes. Questions you should be able to answer by the end of today’s lecture: For All Subject Study Materials – Click Here. Clipping is a handy way to collect important slides you want to go back to later. The m… Current in the N region is carried by ....electrons Current in the P region is carried by . The LED is a special type of diode and they have similar electrical characteristics of a PN junction diode. P type and N type semiconductors, takenseparately are of very limited use.If we join a piece of P type material to a pieceof N type material such that the crystalstructure remains continuous at the boundary,,….. A PN JUNCTION is formed. They are also called p-n diodes in analogy with vacuum diodes. V-I characteristics of p-n junction diode. PN junction can basically work in two modes, (A battery is connected to the diode) Oforward bias mode (positive terminal connected to p-region and negative terminal connected to n region) areverse bias mode (negative terminal connected to p-region and positive terminal connected to n … This video explains complete process of diode working i.e. The overall unit is of very small dimension nearly about 2.5 mm. Working of Light Emitting Diode. APPLICATIONS- as rectifiers to convert AC into DC. When the length of the nregion is longer than the di usion length, the hole concentration at a distance xfrom the depletion region, marked in gure 3, is given by p n(x) = p n(0) exp(x L h) excess holes ) p … You can change your ad preferences anytime. Pn junction diode characteristics Lab expriment, Presentation on half and full wave ractifier.ppt, No public clipboards found for this slide. Hence the LED allows the flow of current in the forward direction and blocks the current in the reverse direction.
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